High Voltage and GSM InGaP HBT (P5 & P6) power processes have been developed specifically for power amplifiers requiring operation at 8-10 volt bias and/or ruggedness under high VSWR conditions. GSM PA has demonstrated superior RF performance and can withstand more than 25:1 VSWR at 5V bias. Linear PA at 9V Vcc and has been demonstrated by customers for Infrastructure Driver Amplifiers. Both Processes have been in mass production since 2001.

GSM 4W Power Cell Evaluation Board
	PA performance* from 5 consecutive lots 　*Measured on the evaluation board (as shown) Matched to 50Ώ When matched for best power fficiency, PAE ~68% Plotted data were not de-embedded When de-embedded to device level, PAE ~74% Device ruggedness: Survived >25:1 at 5V bias